本发明涉及由HgCdTe单晶制备的红外辐射光伏探测器。用本专利提出的技术能获得光敏面大于结面、光敏面位于与HgCdTe半导体结面垂直的平面上的光伏探测器。按照本发明制备的探测器,由于具有上述的基本特征,使结面与探测器接收到的红外辐射方向平行。这种新型结构的探测器具有的主要优点是,可 The present invention relates to infrared radiation photovoltaic detectors made from HgCdTe single crystals. With the technique proposed in this patent, it is possible to obtain a photovoltaic detector having a photosensitive surface larger than that of the junction and a photosensitive surface located on a plane perpendicular to the junction of the HgCdTe semiconductor. The detector prepared in accordance with the present invention has the above-mentioned basic features such that the junction plane is parallel to the direction of infrared radiation received by the detector. The main advantage of this new structured detector is that it can