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利用本实验室生长的4H-SiC外延材料开展了SiC微波功率器件的研究.通过对欧姆接触和干法刻槽工艺的优化,研制出高性能的SiCMESFET.利用1mm栅宽SiCMESFET制成的微波功率放大器在2GHz64V工作时,连续波输出功率达4·09W,功率增益为9·3dB,PAE为31·3%.文中还给出了SiC功率放大器在微波大信号工作时的稳定性的初步测试结果.
A SiC microwave power device was developed by using 4H-SiC epitaxial material grown in our lab.High-performance SiCMESFET was developed by optimizing ohmic contact and dry-etching process.With microwave power of 1mm gate-width SiCMESFET When the amplifier operates at 2GHz64V, the output power of continuous wave is 4.09W, the power gain is 9 · 3dB and the PAE is 31.3% .A preliminary test result of the stability of the SiC power amplifier during microwave large signal operation is also given .