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制备MFIS存储器的铁电薄膜一般选用抗疲劳特性好的SBT铁电薄膜,介质层一般选用ZrO2作为阻挡层,以克服电荷注入效应,改进器件的性能。在MFIS的研制中,SBT薄膜和ZrO2薄膜的刻蚀是关键工艺之一。研究了用SF6和Ar作为反应气体刻蚀SBT及ZrO2薄膜的方法,对不同条件下SBT和ZrO2的刻蚀速率进行了实验研究和讨论、分析,得到了刻蚀SBT及ZrO2的优化工艺条件。
The ferroelectric thin film for preparing MFIS memory is generally selected SBT ferroelectric thin film with good anti-fatigue properties. The dielectric layer generally uses ZrO2 as a barrier layer to overcome the charge injection effect and improve the performance of the device. In the development of MFIS, SBT film and ZrO2 film etching is one of the key processes. The method of etching SBT and ZrO2 thin films with SF6 and Ar as reaction gases was studied. The etching rates of SBT and ZrO2 under different conditions were studied and discussed. The optimized technological conditions of SBT and ZrO2 etching were obtained.