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采用ＡｒＦ准分子脉冲激光沉积方法（ＰＬＤ），以六方氮化硼（ｈ－ＢＮ）作靶在Ｓｉ（１００）衬底上制备氮化硼薄膜。ＸＲＤ及ＦＴＩＲ透射谱测量表明生成的氮化硼薄膜是含有少量六方氮化硼结构的立方氮化硼（Ｃ－ＢＮ）．ＡＥＳ测量表明不同条件下生成的薄膜中Ｎ与Ｂ的相对含量是不同的，最大比例近乎为１：１，薄膜的维氏显微硬度ＨＶ最大值为１５８０ｋｇ／ｍｍ２。
Boron nitride films were prepared on Si (100) substrates by hexagonal boron nitride (h-BN) using ArF excimer laser deposition (PLD). The XRD and FTIR transmission spectrum measurements showed that the boron nitride film was cubic boron nitride (C-BN) with a small amount of hexagonal boron nitride structure. AES measurements showed that the relative content of N and B in the films formed under different conditions is different, the maximum ratio is almost 1: 1, and the maximum Vickers microhardness HV of the film is 1580kg / mm2.