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离子注入的GaAs霍尔元件是一种新型的磁敏元件。本文介绍了用核磁共振(NMR)方法测量其线性度的原理和方法,描述了测量仪器,给出了霍尔电势与外加磁场的关系曲线,讨论了校准测量的误差。
Ion implanted GaAs Hall element is a new type of magnetic sensing element. This paper introduces the principle and method of measuring the linearity by NMR, describes the measuring instrument, gives the curve of the Hall potential and the applied magnetic field, and discusses the error of the calibration measurement.