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用SiH_4和SnCl_4作源,用 GD工艺制备了无定形硅锡合金.随着锡含量的增加,合金膜的光学带隙和光电导率均单调下降,导电类型由N型变为P型.随着光学带隙的减小,激活能先增加后减小,室温暗电导率首先下降然后逐渐上升. 我们在a-SiSn(Cl,H)中掺入一定量的磷作为补偿.当磷的浓度达到某适当值时,合金膜的光电导率可以增加2—3个数量级,同时导电类型由P型又变为N型. 用恒定光电流法对a-SiSn(Cl,H)膜的低吸收系数区进行测量,对测量结果进行了讨论.
With SiH4 and SnCl4 as the source, amorphous silicon-tin alloy was prepared by GD process.With the increase of tin content, the optical bandgap and photoconductivity of the alloy films monotonically decreased and the conductivity type changed from N type to P type. When the optical bandgap decreases, the activation energy first increases and then decreases, and the room temperature dark conductivity decreases first and then gradually increases.We add a certain amount of phosphorus as a compensation to a-SiSn (Cl, H) At a proper value, the photoconductivity of the alloy film can be increased by 2-3 orders of magnitude, and the conductivity type changes from P-type to N-type. The low absorption coefficient of the a-SiSn (Cl, H) Area for measurement, the measurement results were discussed.