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The effect of a high temperature AlN buffer layer grown by the initially alternating supply of ammonia (IASA) method on AlGaN/GaN heterostructures was studied.The use of AlN by the IASA method can effec-tively increase the crystalline quality and surface morphology of GaN.The mobility and concentration of 2DEG of AlGaN/GaN heterostuctures was also ameliorated.
The effect of a high temperature AlN buffer layer grown by the initially alternating supply of ammonia (IASA) method on AlGaN / GaN heterostructures was studied. Use of AlN by the IASA method can effec-tively increase the crystalline quality and surface morphology of GaN The mobility and concentration of 2DEG of AlGaN / GaN heterostuctures was also ameliorated.