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对体布拉格光栅(VBG)作为波长选择元件的外腔半导体激光器的波长锁定进行了实验研究,报道了连续运转输出功率达43.5 W的半导体激光器阵列的体布拉格光栅波长锁定实验结果,给出了不同热沉温度下的稳定的波长锁定结果,说明采用体布拉格光栅外腔将减小半导体激光器的温控压力。实验中发现,随着注入电流的增大,输出激光功率逐渐增强,锁定的激射波长向长波长方向偏移。在输出功率为34.5 W时,波长红移约0.56 nm。这一移动与实验测量的体布拉格光栅的温度特性相吻合。连续和高占空比运行、高输出功率情况下,在器件的设计和使用时应该考虑这一效应。
Wavelength locking of the external cavity semiconductor laser with Bragg grating (VBG) as a wavelength selective element has been experimentally studied. The experimental results of Bragg grating wavelength locking of a semiconductor laser array with a continuous output power of 43.5 W have been reported, The stable wavelength locking results at the heat sink temperature indicate that using a bulk Bragg grating external cavity will reduce the temperature control pressure of the semiconductor laser. It is found in the experiment that with the increase of the injection current, the output laser power is gradually increased, and the lased laser wavelength is shifted to the longer wavelength. At an output power of 34.5 W, the wavelength is red-shifted by about 0.56 nm. This move is in line with the experimental temperature characteristics of bulk Bragg gratings. Continuous and high duty cycle operation, high output power conditions, the design and use of the device should take this effect into account.