美国斯坦福大学和两家公司联合开发出一种利用激光精密测定GaAs集成电路操作装置.使用这种方法能及时发现制造工序中产生的各种缺陷,从而,大幅度地降低生产成本。这种方法的特点是,光速能在GaAs小片中随附加电压而变化。当红外线激光照射小片时,由于基板本身对红外线呈透明状态,所以,只要用每秒2次以下的高速脉冲即可反映出发生在小片内部不同形态的频闪观测像。用这一方法同时也能观察放大器内部出现电荷饱和的确切位置。目前,科学家们正在进一步研究用这种方法精密测定非电子光学物质硅集成电路的操作 Stanford University and the two companies have jointly developed a GaAs integrated circuit operating device that uses laser precision measurement to detect various defects in manufacturing processes in a timely manner, thereby drastically reducing manufacturing costs. The characteristic of this method is that the speed of light can vary with the applied voltage in the GaAs die. Infrared laser irradiation of small pieces, because the substrate itself is transparent to the infrared, so, as long as 2 times per second or less high-speed pulse can reflect the occurrence of different forms within the small pieces of stroboscopic observation. This method also allows you to see exactly where charge saturation occurs inside the amplifier. At present, scientists are further studying the use of this method to accurately measure the operation of non-electronic optical silicon integrated circuits