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本文用一种综合场效应方法(简称 CFE),研究了用于发光二极管制作的多层异质结 GaP/GaAs_(i-x)P_x 等外延材料的某些性质,测量并计算了一系列参数;证明了某些样品各层间存在不连续性及其对发光的影响,从而提供了测量发光器件的一个方法。
In this paper, some properties of epitaxial materials such as multi-layer heterojunction GaP / GaAs_ (ix) P_x used in LED fabrication have been studied by a comprehensive field effect method (CFE). A series of parameters have been measured and calculated. Discontinuities between layers of some samples and their effect on the light emission provide a way to measure the light emitting device.