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采用磁控溅射在玻璃基底上沉积Mg-Zr-O复合介质保护膜,研究Zr掺杂含量对薄膜微观结构和放电性能(着火电压,最小维持电压)的影响。结果发现,沉积的Mg-Zr-O薄膜晶粒细小,微观结构仍然保持MgO的面心立方NaCl型结构,所掺杂的Zr以Zr4+形式置换固溶于MgO晶格中。当掺杂Zr浓度为2.03at%时,薄膜具有最强的(200)择优取向和最小的表面粗糙度。适当Zr掺杂的Mg-Zr-O薄膜和纯MgO薄膜相比,其着火电压和最小维持电压分别降低了25和15V。
Mg-Zr-O composite protective film was deposited on a glass substrate by magnetron sputtering to study the effect of Zr doping content on the microstructure and discharge performance (ignition voltage, minimum sustain voltage) of the film. The results show that the deposited Mg-Zr-O thin film has a fine grain structure. The microstructure of the deposited Mg-Zr-O thin film remains a face-centered cubic NaCl type structure of MgO. The doped Zr is replaced and dissolved in the lattice of MgO by the form of Zr4 +. When the doping concentration of Zr is 2.03at%, the film has the strongest (200) preferred orientation and the smallest surface roughness. The proper Zr-doped Mg-Zr-O thin films have lower ignition voltage and minimum sustain voltage of 25 and 15V, respectively, than pure MgO thin films.