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The possibility of diamond films used as new high-temperature, high-frequency and high-power semiconductor materials is one of the most important application prospects of diamondfilms. However, the random crystal orientation, large amounts of grain boundaries and defectsof the polycrystal diamond films greatly affect the properties of the polycrystalline diamondfilms and make them unsuitable in the high-quality electronic devices, so in the recent fewyears, many people have been devoted to the study of epitexial diamond films. In 1992,
The possibility of diamond films used as new high-temperature, high-frequency and high-power semiconductor materials is one of the most important application prospects of diamondfilms. However, the random crystal orientation, large amounts of grain boundaries and defects of the polycrystal diamond films greatly affect the properties of the polycrystalline diamond fils and make them unsuitable in the high-quality electronic devices, so in the recent few years, many people have been devoted to the study of epitexial diamond films. In 1992,