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用微波等离子体化学气相沉积法 (MPCVD)在硅片和铂基片上生长了氮化碳薄膜。扫描电镜(SEM)观察显示 ,在硅片上形成了多晶的膜 ;EDX能谱分析表明膜中的碳氮比在 1.0～ 2 .0之间 ;X射线衍射谱表明在硅片和铂片上生长的氮化碳薄膜是由α C3N4 和 β C3N4 晶相组成的 ;XPS峰形分析表明 ,薄膜中的C、N主要是以共价单键结合的 ;红外谱中也出现了 β C3N4 的特征谱线。因此有足够的证据表明 ,晶态的氮化碳薄膜已经合成。
Carbon nitride films were grown on silicon and platinum substrates by microwave plasma chemical vapor deposition (MPCVD). Scanning electron microscopy (SEM) observation showed that a polycrystalline film was formed on the silicon wafer. EDX EDS analysis showed that the ratio of carbon to nitrogen in the film was between 1.0 and 2.0. The X-ray diffraction spectrum showed that on the silicon wafer and the platinum wafer The growth of the carbon nitride film is composed of α C3N4 and β C3N4 crystal phase; XPS peak shape analysis showed that the film is mainly covalent single bond; also appeared in the infrared spectrum β C3N4 characteristics Spectral line. Therefore, there is sufficient evidence that crystalline carbon nitride films have been synthesized.