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在2in和3in的SI-GaAs衬底上进行Si、Be、Mg等离子注入,用商用炉进行快速热退火,并用扫描微波光电导、C-V曲线及Hall测试等方法研究了注入层激活率的均匀性。结果表明:快速退火的衬底,其低剂量(3～4×10~(12)cm~(-2))的载流子寿命和迁移率以及高剂量(1×10~(-5)cm~(-2))的载流子浓度可以与热退火的相比或优于热退火的结果。用两种退火方法所得到的这些参数的均匀性没有明显的差别。还研究了两种退火方式对注入层中的损伤消除及载流子激活与温度的关系。对于施主注入,微波光电导技术给出的结果分别与背散射和电学测试所得的结果密切相关。
The Si, Be, Mg and other ions were implanted into 2in and 3in SI-GaAs substrates. The samples were quickly annealed in a commercial furnace. The uniformity of activation rate of the implanted layer was investigated by scanning microwave photoconductivity, CV curve and Hall test. . The results show that the carrier lifetime and mobility at low dose (3 ~ 4 × 10 ~ (12) cm ~ (-2)) and high dose (1 × 10 ~ (-5) cm ~ (-2)) carrier concentration may be better than or better than the result of thermal annealing. There is no significant difference in the uniformity of these parameters obtained by the two annealing methods. The effects of two annealing methods on the damage elimination and carrier activation and temperature in the implanted layer were also studied. For donor injection, the results given by the microwave photoconductive technique are closely related to those obtained by backscattering and electrical testing, respectively.