The Performance Comparisons between the Unconstrained and Constrained Equalization Algorithms

来源 :中国邮电高校学报 | 被引量 : 0次 | 上传用户:slkhdnfoihsdflwdlk
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
This paper proposes two unconstrained algorithms, the Steepest Decent (SD) algorithm and the Conjugate Gradient (CG) algorithm, based on a superexcellent cost function [1~3]. At the same time, two constrained algorithms which include the Constrained Steepest Decent (CSD) algorithm and the Constrained Conjugate Gradient algorithm (CCG) are deduced subject to a new constrain condition. They are both implemented in unitary transform domain. The computational complexities of the constrained algorithms are compared to those of the unconstrained algorithms. Resulting simulations show their performance comparisons.
其他文献
A kind of filed-emission array pressure sensor is designed based on the quantum tunnel effect. The nano-crystalline silicon film is prepared by chemical vapor d
A new kind of crisis was observed in a system where a transition from conservative toquasi-dissipative can be observed. The crisis signifies a sudden and intrin
The computer molecular simulation technique was applied to study the chemisorption of thiophene and tetramethylthiophene as the model sulfides on the simple oxi
In this paper, using Brown technique, we prove the Mohebi-Radjabalipour Conjecture by strengthening a slight thickness condition of the spectrum, and obtain som
The effect of varying pH on the photosystem II (PSII) membrane was studied using absorption and steady-state fluorescence spectroscopy, and using a variable flu
The techniques of oxygen electrode polarography, sodium dodecyl sulfate-polyacryamide gel electrophoresis (SDS-PAGE) and thin layer chromatography (TLC) were em
用改进的反胶束法合成了半导体纳米级氧化锌 ,表面由DDAB(双十二烷基二甲基溴化铵 )修饰 .改进的方法与传统方法的区别是反胶束法中所需要的水是由含水的锌盐直接提供 ,在有
A novel technique is developed for growing high quality ZnO thin films by means of single source chemical vapor deposition (SS CVD) under low vacuum conditions
Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) werecharacterized by Rutherford backscattering/Channeling (RBS/C) toge
应台湾政策基金会的邀请,陕西省政协主席马中平率领陕西省政协代表团一行8人,于4月9日至16日对台湾进行了考察。