AlN crystalline films have been grown on SiC substrates by molecular beam epitaxy. Er doping was carried out by implantation with energy 180keV to fluence of 1 × 1015 ions/cm2. The as-implanted samples were then annealed at 650, 800, 950 and 1100.C respectively, to remove defects and to make Er ions optically active. The annealing up to 1100.C did not exert significant influence on either Er distribution or the profiles of implant-induced lattice damage. Strong 1.54 μm photoluminescence was observed in Er-implanted A1N at room temperature. The experimental results indicate that the photoluminescence lifetime can be improved by increasing the annealing temperature. The maximum photoluminescence lifetime was measured to be 2.3ms.