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概述 在硅半导体工业中,使用完美单晶——无位错(N_D≤500/厘米~3)低含氧量(n_o≤10~(16)原子/厘米~2)无析出杂质,已成为公认的定论。实践同样证明,集成电路工艺过程中诱生的新生缺陷,使完美单晶缺陷增大4～5个数量级,对非完美单晶就更加严重。因而对集成电路成品率和优品率的影响远远超过单晶含有的缺陷的影响,新生缺陷与单晶在工艺过程中产生的“内生新生缺陷”的相互作用亦不可忽视,它能产生一种在没有工
Overview In the silicon semiconductor industry, the use of perfect single crystal - no dislocation (N_D ≤ 500 / cm ~ 3) low oxygen content (n_o ≤ 10 ~ (16) atoms / cm ~ 2) The conclusion. Practice also proves that the nascent defects induced in the process of integrated circuits increase the perfect single crystal defects by 4 to 5 orders of magnitude, which is more serious for non-perfect single crystals. Therefore, the yield of integrated circuits and excellent yield rate far exceeds the single crystal contains defects, single crystal defects in the process of production and the “endogenous nascent defect” interaction can not be ignored, it can produce One in no work