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采用真空蒸镀并退火的方法制备多晶硅薄膜,采用透射电子显微镜对退火前后的样品进行了表征,通过原子力显微镜观察了薄膜的形貌,并测试了薄膜的耐压性能,分析了基板温度、基板距离和退火工艺对薄膜组织和性能的影响。实验结果表明:真空蒸镀所得薄膜为非晶硅薄膜,退火处理可使其多晶化,晶粒尺寸达0.5μm;基板温度120℃、基板距离60 mm为最佳工艺条件,采用该工艺所得多晶硅薄膜的耐压值可达384.2 V。
The polycrystalline silicon thin films were prepared by vacuum deposition and annealing. The samples before and after annealing were characterized by transmission electron microscope. The morphology of the films was observed by atomic force microscopy and the pressure resistance of the films was tested. The effects of substrate temperature, Distance and annealing process on the microstructure and properties of the film. The experimental results show that the film obtained by vacuum evaporation is an amorphous silicon thin film, which can be polycrystallized by annealing, with the grain size of 0.5μm. The substrate temperature of 120 ℃ and the substrate distance of 60 mm are the optimal technological conditions. Polysilicon film pressure value up to 384.2 V.