由于InP和Si的晶格常数相差达8％(GaAs与Si为4％)之多,所以直接在Si片上生长高质量的InP是非常困难的。为了解决这个难题,日本冲电气公司通过采用如下两种途径,采用CVD技术实现了晶体生长,即(1)将Si和InP之间的缓冲层作成InP(20nm)/GaAs(20nm)这样的两层结构;(2)将生长前的洁净处理问题从过去的950℃提高到1030℃。通过采用这种技术,能够获得4～8英寸的InP Since the lattice constants of InP and Si differ by as much as 8% (4% of GaAs and Si), it is very difficult to grow high quality InP directly on the Si wafer. In order to solve this problem, OKI Corporation has adopted CVD to realize the crystal growth by adopting the following two methods: (1) making the buffer layer between Si and InP as two layers of InP (20nm) / GaAs (20nm) Layer structure; and (2) increasing the problem of cleaning before growth from 950 ° C to 1030 ° C. By using this technique, 4 to 8 inches of InP can be obtained