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氢化非晶硅(a-Si…H)薄膜在微电子和光电子工业中有着重要的应用,而椭偏分析技术是一种重要的薄膜表征手段。利用椭偏测量技术并采用Tauc-Lorentz(TL)模型和Forouhi-Bloomer(FB)模型,从不同角度对比研究了a-Si…H薄膜的结构和光学特性。分析结果表明,用两种不同模型得到的a-Si…H薄膜厚度、粗糙层厚度以及光学常数并不一致,由TL模型得到的薄膜厚度更接近扫描电镜(SEM)测量的结果,粗糙层厚度更接近原子力显微镜(AFM)测量结果对应的经验值。结合已发表的文献,分析发现膜厚差异主要来自于模型对薄膜光学参数的不同描述,而光学参数的差异是由于模型推导过程中的不同假设和数学处理产生的。
Hydrogenated amorphous silicon (a-Si ... H) thin films have important applications in the microelectronics and optoelectronics industries, and ellipsometry is an important means of thin film characterization. The structure and optical properties of a-Si ... H thin films were compared from different angles by ellipsometry and Tauc-Lorentz (TL) model and Forouhi-Bloomer (FB) model. The results show that the film thickness, roughness and optical constants of a-Si ... H obtained by two different models are not consistent. The thickness of the film obtained by the TL model is closer to that of the scanning electron microscope (SEM) Close to the experience of atomic force microscopy (AFM) measurement results. According to the published literatures, the differences between the film thickness and the optical parameters are mainly caused by the different descriptions of the optical parameters of the film. The differences of the optical parameters are caused by different assumptions and mathematical treatments in the model derivation.