对硅外延层中微缺陷的研究表明: 1.硅外延层中微缺陷的实质是杂质钉扎空位的结合物,是一种点缺陷,称之为“雾点”。“雾片”的“雾点”密度为10~6～10~8个/厘米~2,亮片的雾点密度低于10~5个/厘米~2; 2.从离子探针的分析结果看出,“雾片”所包含的杂质有K、Na、Ca、Mg、 Micro-defects in the silicon epitaxial layer research shows that: 1. Micro-defects in the silicon epitaxial layer is essentially the impurity pinning the combination of vacancies, is a point defect, known as the “fog point.” “Fog” “fog point” density of 10 ~ 6 ~ 10 ~ 8 / cm ~ 2, the fog point fog density less than 10 ~ 5 / cm ~ 2; 2. From the analysis results of the ion probe Out, “Fog” contains impurities K, Na, Ca, Mg,