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采用GaAs pin工艺设计和制作了毫米波超宽带大功率单刀双掷开关单片集成电路。在GaAs pin二极管建模阶段充分考虑寄生效应对模型的影响,获得高精度模型;在电路设计阶段采用GaAs pin二极管单级并联结构,提高功率特性;在工艺加工阶段调整p+层、n+层的掺杂浓度和i层的厚度,获得低损耗、高功率特性的GaAs pin二极管;最终制备的单刀双掷开关芯片在片测试表明,在25～40 GHz范围内插入损耗小于1.0 dB,隔离度大于25 dB,输入输出电压驻波比小于2.0∶1,具有优异的宽带小信号特性;35 GHz下承受功率高达34 dBm,具有非常好的功率特性。
Using GaAs pin process design and manufacture of ultra-wideband millimeter-wave single-pole high-power single-pole double-throw switch monolithic integrated circuits. In the GaAs pin diode modeling stage, full consideration of parasitic effects on the model, to obtain high-precision model; in the circuit design stage using GaAs pin diode single-stage parallel structure to improve power characteristics; in the process of processing phase adjustment p + layer, n + layer doped And the thickness of the i-layer to get the GaAs pin diode with low loss and high power. The fabricated SPDT chip shows that the insertion loss is less than 1.0 dB and the isolation is greater than 25 in the range of 25-40 GHz dB, the VSWR is less than 2.0: 1, with excellent wideband small-signal characteristics. Withstanding power up to 34 dBm at 35 GHz, it has very good power characteristics.