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激光辐照技术是近年来广泛用于半导体工艺中的一种行之有效的技术,已在离子注入的退火、形成硅化物和欧姆接触等方面取得了令人满意的效果。本文叙述用连续式CO_2激光器,在不同的时间内,对MO S结构进行辐照,根据c—v和c—t技术测量照射前后硅片的少数载流子寿命和氧化层中的固定电荷,实验结果表明:照射后硅片的少数载流子寿命明显降低,固定电荷增加。最后对少数载流子寿命降低的原因作了较为详细的讨论。
Laser irradiation technology is an effective technique that has been widely used in semiconductor processes in recent years and has achieved satisfactory results in ion implantation annealing, silicide formation and ohmic contact. This paper describes the use of continuous CO_2 laser at different times, MO S structure irradiation, according to c-v and c-t technology before and after irradiation of minority carrier lifetime and oxide layer of fixed charge, The experimental results show that the minority carrier lifetime of silicon wafers decreases obviously after irradiation, and the fixed charge increases. Finally, the reasons for the decrease of minority carrier lifetime are discussed in detail.