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使用多层沉积和大块沉积两种技术,在硅和蓝宝石的单晶基底上沉积了Yba2XCu3O7高Tc薄膜.实验显示:在硅基底上得到了转变温度为80K的期待结果.
The Yba2XCu3O7 high-Tc thin films were deposited on single-crystal substrates of silicon and sapphire using both multi-layer and bulk deposition techniques, and the experimental results show that the expected results at a transition temperature of 80 K were obtained on a silicon substrate.