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红外瞬态退火高剂量注砷硅样品得到的超固溶度(亚稳载流子浓度),再经热处理后能引起弛豫现象.我们用沟道背散射方法测定了在不同后处理条件下的As原子替位率、晶格位置、深度分布以及衬底的损伤.将沟道背散射分析结果与电学测试结果作了比较,从而讨论了可能的失活机理.
Infrared transient annealing high-dose injection of arsenic silicon samples obtained super-solid solubility (metastable carrier concentration), and then heat treatment can cause relaxation phenomenon.We measured by channel backscattering under different post-processing conditions As atom substitution rate, lattice position, depth distribution and substrate damage, the channel backscattering analysis was compared with the electrical test results to discuss the possible deactivation mechanism.