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本文介绍了二氧化硅介质击穿场加速因子的计算方法。根据氧化层总电荷量不变(对用相同工艺步骤制造的MOS电容而言)的观察结果,并假定I-V曲线在击穿前由Fowler Nordheim沟道所控制,可得到加速因子的简单表达式。该表达式与文献所报道的由实验得到的加速因子非常吻合。从该表达式也可以看出,加速因子与电场有关,其关系式为加速因子与电场之间成对数关系而不是线性关系,这一点在外推加速测试的结果时尤需注意。
This article describes the calculation method of the acceleration factor of the breakdown field of silica media. Based on the observation that the total oxide charge is constant (for MOS capacitors made with the same process steps) and that the I-V curve is dominated by the Fowler Nordheim channel prior to breakdown, a simple expression of the acceleration factor is obtained. This expression is in good agreement with the experimental acceleration factors reported in the literature. From this expression, it can also be seen that the acceleration factor is related to the electric field, and the relation is a logarithmic relationship between the acceleration factor and the electric field, rather than a linear relationship. This is especially noticed when extrapolating acceleration test results.