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应用高纯氮携带液氧蒸气作为氧源的热氧化技术和 Si H4- NH3体系 L PCVD技术 ,制作对辐照吸收有明显响应的 MNOS器件 ,在 10 3～ 10 5 Gys剂量范围内其平带电压漂移值随辐照剂量的增加按指数规律衰减。样品接受辐照是非破坏性的 ,在接受 5× 10 5 Gys的大剂量辐照后 ,通过简单的正负脉冲电压处理就可恢复到初始状态 ,并在接受新的辐照时以同样的规律给出响应 ,是一种可校准并可供辐照剂量探测重复使用的新器件
MNOS devices with significant response to radiation uptake were fabricated by thermal oxidation technology using high purity nitrogen carrying liquid oxygen vapor as oxygen source and L PCVD technology of Si H 4 -NH 3 system. The voltage drift decay exponentially with increasing radiation dose. Irradiation of samples was non-destructive. After receiving a large dose of 5 × 10 5 Gys irradiation, the sample was restored to its original state by a simple positive and negative pulse voltage treatment and the same rule was applied when receiving new irradiation Given a response, it is a new device that can be calibrated and reused for radiation dose detection