论文部分内容阅读
利用热脉冲退火方法改善碲镉汞的近表面。正如由能量为MeV H_e~+离子沟道效应所观察到的,用约260℃7 s的退火,能改善外延HgCdTe表面的晶体质量。类似的退火也用于修补由于在250keV的件条下HgCdTe注入10~(15)~(11)B/cm~2(在液氮下)所造成的损伤。用高温和长时间的退火(或者二者之一),可以观察到表面汞的损失。用Rutherford背散射测量法测定这种损失。最后损失率用N□=Aexp(-△E/kT)式求出,式中A和△E与材料组份有关,x=0.23:A=10~(29),△E=1.8eV;X=0.4:A=10~(38),△E=2.6eV。
Improvement of Near Surface of HgCdTe by Hot Pulse Annealing. As observed by the energy of the MeV H e + ion channel effect, annealing at about 260 ° C for 7 s improves the crystal quality of the epitaxial HgCdTe surface. A similar anneal was also used to repair the damage caused by HgCdTe injection of 10-15 B11 cmHg under liquid nitrogen at 250 keV. With high temperature and prolonged annealing (or both), surface mercury loss can be observed. This loss is measured by Rutherford backscatter measurement. The final loss rate is given by N = = Aexp (- ΔE / kT) where A and ΔE are related to the material composition, x = 0.23: A = 10-29, ΔE = 1.8eV, and X = 0.4: A = 10 ~ (38), △ E = 2.6 eV.