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GaAs基半导体激光器芯片在空气中解理后,解理腔面会被空气氧化形成腔面缺陷,在腔面形成的缺陷严重影响了器件的寿命。用GaAs衬底表面模拟半导体激光器的解理腔面,研究了不同的光学薄膜对GaAs表面特性的影响。研究结果表明暴露在大气中的GaAs表面会形成Ga2O3、As2O3和As2O5缺陷。在表面镀含氧光学膜的GaAs表面上会形成少量Ga2O3缺陷,不形成As2O3和As2O5缺陷,在表面镀ZnSe光学薄膜的GaAs表面没有形成Ga2O3缺陷,也没有形成As2O3和As2O5缺陷。在GaAs表面上蒸镀ZnSe光学薄膜能有效地抑制GaAs表面缺陷的形成,提高半导体激光器的寿命。
After the GaAs-based semiconductor laser chip is cleaved in the air, the cleavage cavity surface is oxidized by air to form a cavity surface defect, and the defects formed on the cavity surface seriously affect the lifetime of the device. The effect of different optical thin films on the surface properties of GaAs was investigated by simulating the surface of a semiconductor laser with a GaAs substrate. The results show that Ga2O3, As2O3 and As2O5 defects are formed on the surface of GaAs exposed to the atmosphere. A small amount of Ga 2 O 3 defects and no As 2 O 3 defects were formed on the surface of GaAs with oxygen-containing optical films on it. No Ga 2 O 3 defects and no As 2 O 3 defects were formed on the surface of GaAs with ZnSe optical films. The evaporation of ZnSe optical thin film on the surface of GaAs can effectively suppress the formation of surface defects of GaAs and improve the lifetime of the semiconductor laser.