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研究了一种基于BCB材料的牺牲层接触平坦化技术,用于红外焦平面阵列Post CMOS工艺之前对读出电路表面的平坦化,以利于微测辐射热计微桥阵列与读出电路的集成。利用该方法成功将2μm的电路表面突起,平坦化为表面起伏56 nm的平面,可替代会给器件带来颗粒和损伤的化学机械抛光(CMP)技术。并在该平坦层上方成功进行了非晶硅敏感薄膜的沉积、微桥结构的图形化以及同时作为牺牲层的BCB的释放。通过实验研究了BCB膜层的厚度与转速、固化温度的关系,实验发现BCB的收缩率随温度小范围变化,约为30%。研究了BCB的等离子刻蚀特性,表明该材料适合用等离子刻蚀的方法进行接触孔的刻蚀和牺牲层释放。最后,利用BCB牺牲层接触平坦化技术成功地在读出电路(ROIC)芯片上制作了160×120面阵的非制冷红外焦平面阵列。
A sacrificial layer contact planarization technique based on BCB material is studied for the planarization of the readout circuit before the Post CMOS process of the infrared focal plane array to facilitate the integration of the microbolometer array with the readout circuit of the microbolometer . Using this method successfully planarizes 2μm of the circuit surface bumps into a plane with a 56nm fluctuation in the surface, replacing the chemical mechanical polish (CMP) technique that causes particles and damage to the device. And deposition of amorphous silicon-sensitive thin films, patterning of a micro-bridge structure, and the simultaneous release of BCB as sacrificial layers were successfully performed over the planarization layer. The relationship between the thickness of BCB film and the rotational speed and the curing temperature was experimentally studied. It was found that the shrinkage rate of BCB varied with the temperature to about 30%. The plasma etching properties of BCB were studied, indicating that the material is suitable for the etching of contact holes and the sacrificial layer release by plasma etching. Finally, a 160 × 120 array uncooled infrared focal plane array was successfully fabricated on a readout circuit (ROIC) chip using BCB sacrificial layer contact planarization.