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微型传感器中氮化硅薄膜的微加工技术(见0113730) Y2000-62566-182 0113070SiGe HBTs 中寄生导带阻档层形成器件物理分析=Device physics analysis of parasitic conduction band barri-er formation in SiC-e HBTs[会,英]/Roenker,K.P.&Alterovitz,S.A.//2000 IEEE Topical Meeting on Sili-con Monolithic Integrated Circuits in RF Systems,Digestof Papers.—182～186(EC)
Micromachining Technology of Silicon Nitride Thin Films in Miniature Sensors (see 0113730) Y2000-62566-182 0113070 SiGe Parasitic conduction band barrier formation device in HBTs Physical Analysis of the parasitic conduction band barri-er formation in SiC-e HBTs [Will, English] / Roenker, KP & Alterovitz, SA // 2000 IEEE Topical Meeting on Sili-con Monolithic Integrated Circuits in RF Systems, Digest of Papers. -182-186 (EC)