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研究了分子束外延生长的不同含量的GaAs1-xSbx/GaAs量子阱的光荧光特性和时间分辨光谱特性.分析表明,利用电子空穴分离导致了能带弯曲和能带填充效应,实验结果说明了GaAs1-xSbx/GaAs异质结至少在Sb原子数目百分比为16%￣26%时是Type-II结构.
The fluorescence and time-resolved spectroscopic properties of GaAs1-xSbx / GaAs quantum wells with different contents of molecular beam epitaxy have been studied. The results show that the use of electron-hole separation leads to band bending and band-filling effect. The GaAs1-xSbx / GaAs heterostructure is a Type-II structure at least when the percentage of Sb atoms is 16% to 26%.