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利用自行研制的光谱响应测试仪工程化样机,对透射式GaAs光电阴极在高温激活结束、低温激活结束以及铟封成管后的光谱响应特性进行了测试。结果显示,铟封后阴极整个响应波段的光谱响应下降,长波响应受到最显著的影响,表现为800~815 nm之间长波响应大幅度衰减,截止波长和峰值波长向短波移动,峰值响应和积分灵敏度减小,最终的光谱响应曲线变得平坦。阴极参量的计算结果反映铟封后阴极的表面逸出几率降低,说明铟封引起阴极表面激活层发生变化,使得能量较低的长波段光生电子不容易逸出,阴极长波响应和灵敏度随之降低。进一步分析了铟封过程中影响阴极表面激活层的因素。
The spectral responsivity of the transmissive GaAs photocathode after high-temperature activation, low-temperature activation and indium-sealed tube was tested by using the self-developed spectral response tester. The results show that the long-wave response is most significantly affected by the decrease of the spectral response of the cathode after the In-sealed cathode. The long-wave response decays sharply between 800 and 815 nm, and the cut-off wavelength and the peak wavelength shift to the short wavelength. The peak response and integral The sensitivity decreases and the resulting spectral response curve becomes flat. The calculated results of the cathode parameters reflect the decrease of the surface escape probability of the cathode after the indium seal, indicating that the indium seal causes the change of the active layer on the cathode surface, so that the lower energy long wavelength band photoelectrons do not easily escape and the cathode long-wave response and the sensitivity decrease . Further analysis of the indium sealing process on the cathode surface of the activation layer factor.