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为解决VO2薄膜相变温度过高,热滞回线温宽过大以及掺杂后红外透过率变低等问题,开展了低成本钨钒共溅热致变色薄膜制备工艺的探索。先在室温条件下采用磁控共溅射的方法于玻璃基片上制备得到含钨量为1.4%的金属薄膜,再在空气中采用后退火工艺使金属薄膜充分氧化为热致变色薄膜。对薄膜样品的物理结构和光学性能进行了分析,发现钨钒共溅没有改变VO2薄膜在玻璃表面择优取向生长,但显著改变了VO2薄膜的表面形貌特征。观察到钨钒共溅热致变色薄膜的相变温度较普通VO2薄膜从68℃降低至40℃,热滞回线温宽由6℃缩小为3℃,低温半导体相的红外透过率分别为62%和57%。结果表明,钨钒共溅可达到相变温度降低,热滞回线温宽变窄,掺杂前后红外透过率变化不大之目的。
In order to solve the problems of high phase transition temperature of VO2 thin film, too wide temperature hysteresis loop and low infrared transmittance after doping, the preparation of low-cost tungsten-vanadium co-sputtering thermochromic thin film was investigated. Firstly, a metal thin film containing 1.4% of tungsten was prepared on a glass substrate by magnetron co-sputtering at room temperature, and then the metal thin film was fully oxidized into a thermochromic thin film by the post-annealing process in air. The physical structure and optical properties of the films were analyzed and found that co-sputtering of tungsten and vanadium did not change the preferred orientation of the VO2 thin films on the glass surface, but significantly changed the surface morphology of the VO2 thin films. It is observed that the phase transition temperature of the V-Co films decreases from 68 ℃ to 40 ℃, and the thermal hysteresis width decreases from 6 ℃ to 3 ℃. The infrared transmittance of the low-temperature semiconductor phase is 62% and 57%. The results show that the co-sputtering of tungsten and vanadium can achieve the purpose of decreasing the phase transition temperature, narrowing the temperature hysteresis width and changing the infrared transmittance before and after doping.