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1.在Cd和Zn结尾的{001}GaAs上两维分子束外延{001}CdTe(N.K.Dhar)2.在金属有机物汽相外延系统中利用Ge界面层在Si上生长CdTe的研究(Wen Sheng Wang)3.用垂直布里奇曼法生长的CdZnTe晶体中碲析出的热迁移(T.S.Lee)4.垂直布里奇曼技术用于CdZnTe衬底的锌组份的均匀化(T.S.Lee)5.作为CdTe基衬底的原材料,镉和碲纯度的评价(R.Triboulet)
1. Two-dimensional molecular beam epitaxy {001} CdTe (NKDhar) on {001} GaAs at the end of Cd and Zn 2. Study on the growth of CdTe on Si using a Ge interface layer in a metal-organic vapor phase epitaxy system (TSLee) 4. Vertical Bridgman Technology for Uniformization of Zinc Components in CdZnTe Substrates (TSLee) 5 . As a raw material for a CdTe-based substrate, the purity of cadmium and tellurium (R. Tripoulet)