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最近国外介绍了一种新型场效应晶体管.静电场在半导体表面感应所生的载流子起了导电的作用.半导体硅表面有一层氧化硅绝缘层,然后再是蒸发铝膜;使用时电压加在与半导体硅互相绝缘的铝膜上.工作时载流子就在硅的两个扩散区间流动.所得的晶体管输入阻抗为10~(13)欧电阻并联25微微法电容,跨导在1到5毫安/伏之间.
Recently, a new type of field-effect transistor has been introduced abroad. The electrostatic field induces carriers in the semiconductor surface to act as an electrical conductor. The silicon surface of the semiconductor has a silicon oxide layer and then an evaporated aluminum film. When the voltage is applied On the aluminum film that is insulated from the semiconductor silicon, carriers flow in the two diffusion regions of the silicon during operation, and the resulting transistor has an input impedance of 10-13 ohms in parallel with a capacitance of 25 pF and a transconductance of 1 to 5 mA / volt.