平面工艺制造半导体探测器,始于六十年代初期,但由于需要的设备多,工艺比较复杂,而探测器的电性能又不十分突出,致使该工艺很少被采用,各个领域使用的硅探测器,大多是用面垒工艺、扩散工艺和一般离子注入工艺制造的。直到七十年代末,Kemmer解决了一系列工艺问题后,才使探测器的性能提高到一个崭新水平,后来许多国家相继开展了这个工作,并取得了优异成果,制造出了带电粒子探测器,γ,X射线探测器,位置 Flat-panel manufacturing of semiconductor detectors began in the early 1960s but due to the large number of devices and processes involved and the poor electrical performance of the detector, the technology is seldom used and silicon detection in all fields Devices, most of them are using barrier technology, diffusion technology and general ion implantation process. It was not until the late seventies that Kemmer solved a series of technological problems before the performance of the detector was raised to a whole new level. Later, many countries carried out this work one after another and obtained excellent results to manufacture charged particle detectors, γ, X-ray detector, position