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对影响光敏三极管光电响应速度的器件结构进行了理论和计算机数值分析。结果表明 ,与基极电阻和电流增益相关的基区宽度是器件优化设计的重点之一。实验结果与分析结果较好一致。选用合适的基区宽度并采取其他措施 ,可使光敏三极管的响应时间降至 0 .6 μs以下。
The structure of the device that affects the phototransistor response of phototransistor is analyzed theoretically and numerically. The results indicate that the base width associated with base resistance and current gain is one of the key areas in device optimization design. The experimental results are in good agreement with the analysis results. Select the appropriate base width and take other measures to make the phototransistor response time to 0. .6 μs below.