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在DX-3A扫描电子显微镜上加上了低温样品架,在83K用电子束惑生电压技术(EBIV)检测了锑化铟光生伏特型红外探测器的若干性能.探测器的EBIV像可清楚地显示出光敏面扩大的程度及多元探测器中各敏感元之间的隔离不完善性.光敏面上缺陷引起的响应不均匀性也可灵敏地检测出来.对于具有腐蚀台阶的台面型探测器,从EBIV分布曲线可估计出p-n结的深度.
Several features of the indium antimonide PV-IR detector were examined with a low-temperature sample holder on a DX-3A scanning electron microscope at 83K using the Electron Beam Pursuit Voltage Technology (EBIV). The EBIV image of the detector clearly shows Showing the extent of photosensitive surface expansion and the multi-detector detector between the imperfect isolation between the photosensitive surface defects caused by the response of non-uniform can also be sensitive to detect it.For the bench with corroded steps detectors, The pn junction depth can be estimated from the EBIV distribution curve.