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用化学气相沉积（ＣＶＤ）技术，在阳极氧化铝模板的有序微孔内，制备了高度取向的多晶Ｓｉ纳米线阵列．用原子力显微镜（ＡＦＭ）、扫描电子显微镜（ＳＥＭ）、透射电子显微镜（ＴＥＭ）分别观察了模板及Ｓｉ纳米线阵列的表面、断面形貌及单根Ｓｉ纳米线的显微结构，用Ｘ射线衍射仪（ＸＲＤ）分析了Ｓｉ纳米线阵列的晶体结构．此方法制备出的Ｓｉ纳米线阵列生长方向高度有序，直径和长度易于控制，较少发生周期性不稳定生长而产生的弯曲和缠绕现象，相对其他方法具有工艺简单、成本低、可控性强、易实现大面积生长等优点
Highly oriented polycrystalline Si nanowire arrays were prepared by chemical vapor deposition (CVD) within ordered pores of anodized aluminum templates. The surface and cross-sectional morphology of the Si nanowire arrays and the Si nanowire microstructure were observed by atomic force microscopy (AFM), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) (XRD) analysis of the Si nanowire array crystal structure. The Si nanowire arrays prepared by the method are highly ordered in growth direction, easy to control in diameter and length, less in bending and twisting phenomenon caused by periodic unstable growth, and have the advantages of simple process, low cost and controllability compared with other methods Strong, easy to achieve the advantages of large area growth