提出了一种改进的角度抛光方法来测量硅片的亚表面损伤.其原理是:经过研磨和化学机械抛光后,起保护作用的陪片靠近胶黏剂的一端形成一个无损伤的、完整的劈尖,劈尖的棱边作为测量亚表面损伤的基准;角度抛光的倾斜角可通过劈尖上面产生的干涉条纹准确地测量得到.采用这种方法可以方便、准确地测量硅片由切割、研磨和磨削引起的亚表面损伤,其能够测量的最小损伤深度为几百纳米. An improved method of angle polishing is proposed to measure the subsurface damage of silicon wafers, the principle of which is that after grinding and chemical mechanical polishing, the protective pellicle near the end of the adhesive forms an intact, intact The tip of the wedge and the wedge is used as a reference for measuring the sub-surface damage. The angle of the angle polishing can be accurately measured by the interference fringe generated on the wedge. By this method, the silicon wafer can be conveniently and accurately measured by cutting, Sub-surface damage caused by grinding and grinding, which can measure a minimum depth of damage of a few hundred nanometers.