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最近几年来,我们在LSI电路基础工艺方面作了两项改进:用抗场氧化的Si_3N_4层和一次氧化层直接作MOS管的栅,从而简化了工艺并提高了电路成品率;在栅氧化之后增加长一次薄多晶,用它保护再开光刻孔,生长多晶完成多晶和单晶的直接接触,从而避免了光刻对栅氧化层质量的破坏。两项技术在几种LSI电路中试用均取得了明显结果。在我们取得基本结果之后,发现国外才有类似的研究报导。
In recent years, we have made two improvements in the basic circuit of LSI circuit: using the field-resistant Si_3N_4 layer and the primary oxide layer as the gate of the MOS transistor directly, thus simplifying the process and improving the circuit yield; after the gate oxidation Increase the length of a thin polycrystalline, use it to protect and then open the hole, the growth of polycrystalline finish polycrystalline and single crystal direct contact, thus avoiding the lithography damage to the gate oxide quality. Two technologies have achieved significant results in several LSI circuits. After we have obtained the basic results, we find that there is a similar study abroad.