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The electrical contact properties of Co/4H-SiC structures are investigated.A carbon interfacial layer between a Co film and SiC is used to improve the Ohmic contact properties significantly.The C film is deposited prior to Co film deposition on SiC using DC sputtering.The high quality Ohmic contact and specific contact resistivity of 2.30×10~(-6)Ω·cm~2 are obtained for Co/C/SiC structures after two-step annealing at 500℃for 10 min and 1050℃for 3 min.The physical properties of the contacts are examined by using XRD.The results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing and carbon-enriched layer is produced below the contact,playing a key role in forming an Ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons.The thermal stability of Au/Co/C/SiC Ohmic contacts is investigated.The contacts remain Ohmic on doped n-type(2.8×10~(18) cm~(-3)) 4H-SiC after thermal aging treatment at 500℃for 20 h.
The electrical contact properties of Co / 4H-SiC structures are investigated. A carbon interfacial layer between a Co film and SiC is used to improve the Ohmic contact properties significantly. The C film is deposited prior to Co film deposition on SiC using DC sputtering. The high quality Ohmic contact and specific contact resistivity of 2.30 × 10 ~ (-6) Ω · cm ~ 2 were obtained for Co / C / SiC structures after two-step annealing at 500 ℃ for 10 min and 1050 ℃ for 3 min. The physical properties of the contacts are examined by using XRD. The results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing and carbon-enriched layer is below the contact, playing a key role. in forming an Ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons. The thermal stability of Au / Co / C / SiC Ohmic contacts is investigated. contacts remain Ohmic on doped n-type (2.8 × 10 ~ ( 18) cm ~ (-3) ) 4H-SiC after thermal aging treatment at 500 ℃ for 20 h.