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研究了反应气体对辅助加热ＰＣＶＤＴｉＮ薄膜制备的影响。结果表明，提高反应气体中ＴｉＣｌ４的含量可以提高薄膜的沉积速率，而且对薄膜内的氯含量没有影响。提高反应气体中的Ｖ（Ｈ２）／Ｖ（Ｎ２）可以略降低薄膜内的氯含量，在Ｖ（Ｈ２）／Ｖ（Ｎ２）＝２，ＴｉＣｌ４的体积分数为１０％左右时ＴｉＮ薄膜的硬度最高。随着反应气压的升高，沉积速率呈正比上升而显微硬度却下降。
The effects of reaction gases on the preparation of PCVD-TiN films were investigated. The results show that increasing the content of TiCl4 in the reaction gas can increase the deposition rate of the film and has no effect on the chlorine content in the film. Increasing V (H2) / V (N2) in the reaction gas can slightly reduce the content of chlorine in the film. The hardness of TiN film is the highest when V (H2) / V (N2) = 2 and the volume fraction of TiCl4 is about 10% . As the reaction pressure increases, the deposition rate increases in a proportional manner and the microhardness decreases.