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采用Ｓ偏振光和大入射角激光束干涉测量技术，检测ＬＳＩ圆片表面的芯片调平和调焦精度的方法已获得成功，在圆片上各层均能保持良好的调平调焦精度。这种检测方法的试验型，已实现了±１０×１０－５的弧度调平精度和±０１μｍ的调焦精度。
The S-polarized and large-angle laser beam interferometry technology has been used successfully to detect the chip leveling and focusing accuracy of the LSI wafer surface and to maintain good leveling accuracy on all layers of the wafer. The experimental type of this test method has realized the radian leveling accuracy of ± 1.0 × 10-5 and the focusing accuracy of ± 0.1 μm.