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本文应用“暗斑”扫描技术与薄层电阻测定方法测定了半绝缘 InP(SI-InP)衬底的薄层电阻径向分布。结果表明,以两种不同的测试方法在接近单晶锭条头部单晶片表面所测定的径向薄层电阻变化均呈 W 形。本文对以上样品在相同方向作了位错密度测量,位错密度分布与薄层电阻分布之间有着很好的对应关系,并简要地分析和讨论了产生此种对应关系以及位错密度呈 W 状径向分布的机理。
In this paper, the “dark spot” scanning technique and the sheet resistance measurement method were used to determine the sheet resistance radial distribution of the semi-insulating InP (SI-InP) substrate. The results show that the radial sheet resistance changes measured by two different test methods on the surface of single-wafer near the head of single-crystal ingot are all W-shaped. In this paper, the dislocation density of the above samples was measured in the same direction, the dislocation density distribution and the distribution of sheet resistance have a good correspondence between, and briefly analyzed and discussed the relationship between the generation and dislocation density was W The radial distribution of the mechanism.