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提出一种新型 Ga As/ Ga Al As子带间光吸收的红外光电导探测机理 ,利用 MOCVD系统进行器件材料的生长 ,研制了 2 0 0μm× 2 0 0μm的台面形式单管 ,测到了明显的红外光电流信号及阱间共振遂穿效应造成的负阻震荡现象 ,对器件的性能测试结果表明 ,器件的光电流响应和信噪比随着阱数增加而增加 ,器件噪声比常规 Ga As/ Ga Al As量子阱红外探测器低一个数量级
A novel infrared photoconductive detection mechanism of GaAs / GaAlAs subband absorption was proposed. The MOCVD system was used to grow the device materials. A single tube with a surface area of 200μm × 200μm was developed. Infrared light current signal and well resonance tunneling effect caused by negative resistance shock phenomenon, the device performance test results show that the device photocurrent response and signal to noise ratio increases with the trap number increases, the device noise than the conventional Ga As / The Ga Al As quantum well infrared detector is an order of magnitude lower