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介绍了多晶硅发射极双台面SiGe/Si异质结双极晶体管制作工艺流程。通过对LPCVD在n型Si衬底上外延生长SiGe合金层作为异质结双极晶体管基区、自中止腐蚀工艺制作发射区台面、多晶硅n型杂质掺杂工艺制作发射极、PtSi金属硅化物制作器件欧姆接触等工艺技术进行研究,探索出关键工艺的控制方法,并对采用以上工艺技术制作的多晶硅发射极双台面SiGe/Si异质结双极晶体管进行了I-V特性及频率特性测试。结果显示该器件饱和压降小,欧姆接触良好,直流电流放大倍数β随Ic变化不大,截止频率最高达到11.2 GHz。
This paper introduces the manufacturing process of polysilicon emitter dual-stage SiGe / Si heterojunction bipolar transistor. By epitaxially growing a SiGe alloy layer on an n-type Si substrate as a base region of a heterojunction bipolar transistor (LPCVD) on an n-type Si substrate, an emission region is formed by stopping the etching process, an emitter is formed by n-type impurity doping process of polysilicon, and a PtSi metal silicide Device ohmic contact and other process technology to explore the key process control methods, and the use of the above process technology produced polysilicon emitter dual-stage SiGe / Si heterojunction bipolar transistor were IV characteristics and frequency characteristics of the test. The results show that the device has small saturation voltage drop and good ohmic contact. The DC current amplification β does not change much with Ic, and the cut-off frequency is up to 11.2 GHz.