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在三维电子封装中,硅通孔(TSV,Through-Silicon-Via)是实现芯片垂直互连的关键环节,其可靠性至关重要.随着硅通孔中电流密度的增大,电致应力对TSV可靠性的影响也越来越大.基于该耦合方程和有限元的一般原理,详细地推导了弹性材料属性下TSV内部的电致应力、应变的有限元分析模型;利用ABAQUS中的用户自定义单元(user defining element)接口,实现了该模型的有限元计算,并利用解析解对该有限元模型的正确性进行了验证.利用有限元模型对TSV中铜填充的电迁移问题进行了分析计算,描述了铜填充在电迁移过程中电致应力、应变以及空位浓度的演化过程和分布规律,为三维电子封装可靠性的全面评估提供了一定的依据.
Through-Silicon-Via (TSV) is the key to vertical interconnection in 3D electronic packaging, and its reliability is of the utmost importance.With the increase of current density in through-silicon vias, the electrical stress The influence of the reliability of TSV is also more and more.According to the coupled equations and the general principle of the finite element method, the finite element analysis model of the electrostriction and strain of the TSV inside the elastic material properties is deduced in detail. By using the user in ABAQUS The user defined element interface is used to realize the finite element calculation of the model and the correctness of the finite element model is validated by analytical solution.The finite element model is used to study the electromigration of copper filled TSV The evolution process and distribution of electrostrictive stress, strain and vacancy concentration during copper electroplating are described and analyzed. The results provide some evidences for the overall assessment of the reliability of three-dimensional electronic packaging.