The quantification of ionizing energy deposition and non-ionizing energy deposition plays a critical role in precision neutron dosimetry and in the separation of the displacement damage effects and ionizing effects induced by neutron radiation on semiconductor devices. In this report, neutrons generated by the newly built China Spal-lation Neutron Source (CSNS) are simulated by Geant4 in semiconductor material silicon to calculate the ionizing and non-ionizing kerma factors. Furthermore, the integral method is applied to calculate neutron-induced ionizing at the CSNS and non-ionizing kerma factors according to the standard neutron nuclear database and the incident neutron spectrum. In addition, thermoluminescence dosimeters are utilized to measure the ionizing energy deposition and six series of bipolar junction transistors are used to measure the non-ionizing energy deposition based on their neutron damage constants. The calibrated kerma factors that were experimentally measured agreed well with the simulation and integral calculation results. This report describes a complete set of methods and fundamental data for the analysis of neutron-induced radiation effects at the CSNS on silicon-based semiconductor devices.